Microwave impedance of a dc-biased Josephson Fluxonic Diode in the presence of magnetic field and rf drive

摘要

The dependence of microwave impedance of a dc-biased Josephson Fluxonic Diode(JFD) under application of both dc magnetic field and rf excitation iscalculated with a variety of conditions. For finite length of a JFD excited bya very low microwave excitation below its plasma frequency, applied dc magneticfield increases the rate of Vortex and Anti-Vortex (VAV) pair generation whichfine-tunes the microwave resistance up to several factors more than its zerofield microwave resistance (R0). Under this circumstance, adding a dc bias formoving VAVs causes oscillation-like features in microwave impedance of JFDeither in forward or reverse bias. As a result, the microwave resistanceincreases up to 30R0 in the forward bias despite the fact that dampingparameter (\b{eta}) can limit this increase. On the other hand, sharp phaseslips are seen in reverse bias mode on the reactance of overdamped JFD whileincreasing the frequency or amplitude of microwave excitation leads tounprecedented effects of resistance which is described.